Abstract：

Power MOSFETs, IGBTs and wide bandgap (WBG) power devices are widely used in power electronic systems. As the Si-based power device technology is reaching its theoretical performance limit, more and more efforts have been placed on the gate driver design to further improve the device performance. Recent trends for smart gate driver ICs are to integrate a variety of complex functions to provide better protection, monitoring, and local control of the switching behaviour of the power device. This course reviews selected current commercially available gate driver ICs as well as depth studies on examples of recent smart integrated gate driver ICs. In particular, smart gate driver ICs with innovative integrated features such as indirect/non-intrusive collector current sensing, on-chip CPU for digital processing, dynamic gate driving strength for EMI suppression, etc. Local current regulation can also be achieved without any extra discrete components or external digital controller.

功率MOSFETs、IGBTs和宽带隙(WBG)功率器件在电力电子系统中有着广泛的应用。随着硅基功率器件技术逐渐达到理论性能极限，越来越多的人将精力放在栅极驱动器的设计上，以进一步提高器件的性能。智能栅极驱动芯片的最新趋势是集成各种复杂的功能，以便对功率器件提供更好的保护、监测以及开关行为的本地控制。本课程回顾了一些当前市面上可用的栅极驱动芯片，并对最近的智能栅极驱动芯片的案例进行深入研究，特别是具有如下创新集成特性的智能栅极驱动芯片：间接/非侵入式集电极电流感测、片上CPU数字处理、动态栅极驱动强度以抑制电磁干扰等。在不需要额外的分立元件或外部数字控制器的情况下，也能实现本地电流调制。

Course Description：

1. Basic Gate Drive Requirements

This session begins with a review of basic gate drive requirements and the switching behavior of power MOSFETs, IGBTs, and wide bandgap (WBG) power devices such as SiC MOSFETs, and GaN HEMTs. The turn-on/off processes of a typical IGBTs will be examined with special attention on the Miller plateau, dv/dt, di/dt, and ringing oscillation. Several commercially available gate driver ICs will be used to illustrate the typical functionality and protection features. These includes gate current sourcing/sinking, external gate resistor, level shifting, dead-time control, and under voltage lockout (UVLO).

1.基本栅极驱动要求

本课程首先回顾基本的栅极驱动要求以及功率MOSFETs、IGBTs和宽带隙(WBG)功率器件(如SiC MOSFETs和GaN HEMTs)的开关特性。我们将特别关注米勒高台、dv/dt、di/dt和振铃振荡对典型IGBTs开关过程的影响。我们将用一些商用门驱动芯片来说明典型的功能和保护特性。这些包括栅电流源/沉、外部栅电阻、电平转换、死区时间控制和欠压锁定(UVLO)。

2.Smart Gate Driver IC Design Examples

Recent trend in gate driver design include many intelligent features such as on-chip CPU for dynamic control, flexible gate voltage levels, multi-stage driving speed for slew-rate control, precise timing control, current sensing capability for close-loop regulations, and active gate driving mode with continuous optimized dead-time. This session provides an introduction to various smart gate driver designs. The first topic focuses on IGBT gate drivers with indirect/non-intrusive collector current sensing. This is useful for both monitoring and protection of the IGBTs. The second topic emphasizes on the benefits of dynamic gate driving on suppressing EMI and enhancing power conversion efficiency. The final topic highlights the importance of precision timing and dead-time correction. This is especially critical for GaN power devices where the switching operation can in multi-MHz range, requiring pico-second resolution in the dead-time adjustment.

We expect that, after attending this short course, the audience will obtain a useful insight on basic gate driver requirements and gain exposure to future design trend in smart gate driver ICs.

2.智能栅极驱动IC设计实例

栅极驱动设计的最新发展趋势包括许多智能特性，如用于动态控制的片上CPU、灵活的栅压电平、用于压摆率控制的多级驱动速度、精确的时序控制、用于闭环调节的电流感测能力以及具有连续优化死区时间的主动栅极驱动模式。本课程将介绍各种智能栅极驱动器的设计。第一个主题是使用间接/非侵入式集电极电流感测技术的IGBT栅极驱动器。这对监测和保护IGBTs都很有用。第二部分着重讨论了动态栅极驱动技术在抑制电磁干扰和提高功率转换效率方面的优势。最后一个主题强调了精确时序和死区时间校正的重要性。这对于GaN功率器件尤其重要，因为开关操作会在兆赫兹频率范围内进行，其在死区调整时需要皮秒级分辨率。

我们希望通过这门简短的课程，让学员们对智能栅极驱动芯片的基本需求有深入的学习，并对智能栅极驱动芯片的未来设计趋势有所了解。

会议时间：2019年6月27-28日（周四、周五）

会议地点: 南京市江北新区·产业技术研创园孵鹰大厦A座316

会议主题：用于IGBTs和WBG功率器件的栅极驱动芯片

Day 1 (9:00 – 16:30)

注册费：4600元/人，含参会，住宿交通自理。